Gate Drive Transformers for high speed SiC MOSFET and IGBT (EP7 small SMD package) 03-38D

Main features and benefits

• Up to 6W output power
• Input voltage 9V to 18V (UT38B61S~64S), 18 to 36V (UT38B65S~66S)
• Flybackswitching frequency : 350kHz
• Dielectric insulation up to 4KVac
• Low Interwinding Capacitance and High Common-Mode Transient Immunity (CMTI)
• Basic Insulation for a working voltage 568Vrms / 800Vpk ,Compliance with IEC62368-1/IEC61558-2-16
• Design for Ti’s LM5180 and ADI’s LT8302 IC chipset applications.   
• Common control voltage for SiC MOSFETs
• Operating Temperature: -40oC to +130^oC..

Applications

• Industrial drives
• AC motor inverters
• HEV/EV charging station
• Battery chargers
• Solar inverters
• Data centers
• Uninterruptible power supplies
• Active power factor correction
• SiCMOSFET based power converter

Any further details, please contact us: business@umec.com.tw