Gate Drive Transformers for high speed SiC MOSFET and IGBT (EP7) 03-38D
2025/02/18
Main features and benefits
- Up to 6W output power
- Input voltage 9V to 18V (UT38B61S~64S), 18 to 36V (UT38B65S~66S)
- Flybackswitching frequency : 350kHz
- Dielectric insulation up to 4KVac
- Low Interwinding Capacitance and High Common-Mode Transient Immunity (CMTI)
- Basic Insulation for a working voltage 568Vrms / 800Vpk ,Compliance with IEC62368-1/IEC61558-2-16
- Design for Ti’s LM5180 and ADI’s LT8302 IC chipset applications.
- Common control voltage for SiC MOSFETs
- Operating Temperature: -40oC to +130oC..
Applications
- Industrial drives
- AC motor inverters
- HEV/EV charging station
- Battery chargers
- Solar inverters
- Data centers
- Uninterruptible power supplies
- Active power factor correction
- SiCMOSFET based power converter
Any further details, please contact us: business@umec.com.tw
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